The IQE013N04LM6CGSC from Infineon Technologies is an N-Channel Enhancement Mode Logic Level MOSFET that is ideal for OR-ing, telecom, server, switched mode power supplies (SMPS), battery management, and driver applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.6 V, and a drain-source on-resistance of less than 1.35 milli-ohms. The MOSFET has a continuous drain current of up to 205 A and a power dissipation of less than 107 W. It integrates a revolutionary source-down technology utilizing a flipped Silicon die that is positioned upside down, thereby allowing the source potential to be connected to the PCB and resulting in increased thermal capability, advanced power density, and improved device layout.

This JEDEC-qualified MOSFET consists of a center-gate footprint that simplifies the parallel configuration of multiple MOSFETs with optimized layout possibilities for efficient use of the real estate. It has a dual-side cooling package that dissipates three times more power compared to the over-molded package and reduces drain-source on-resistance by up to 30% compared to the current technology. This RoHS-compliant MOSFET is available in a surface-mount package that measures 3.3 x 3.3 mm.