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IRFR825TRPbF

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IRFR825TRPbF Image

The IRFR825TRPbF from Infineon Technologies is a MOSFET with Continous Drain Current 3.9 to 6 A, Drain Source Resistance 1.05 to 1.3 Mohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IRFR825TRPbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFR825TRPbF
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 to 6 A
  • Drain Source Resistance
    1.05 to 1.3 Mohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    34 nC
  • Power Dissipation
    119 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    D-Pak
  • Applications
    Zero voltage switching SMPS, Uninterruptible power supplies, Motor control

Technical Documents
View details on the manufacturer's website
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