1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IRHLUBC770Z4

IRHLUBC770Z4

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IRHLUBC770Z4 Image

The IRHLUBC770Z4 from Infineon Technologies is a MOSFET with Continous Drain Current 0.8 A, Drain Source Resistance 680 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for IRHLUBC770Z4 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHLUBC770Z4
  • Manufacturer
    Infineon Technologies
  • Description
    60 V, 3.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.8 A
  • Drain Source Resistance
    680 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    UBC

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products