1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IRHNA57264SE

IRHNA57264SE

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IRHNA57264SE Image

The IRHNA57264SE from Infineon Technologies is a MOSFET with Continous Drain Current 45 A, Drain Source Resistance 250 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for IRHNA57264SE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHNA57264SE
  • Manufacturer
    Infineon Technologies
  • Description
    250 V, 165 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45 A
  • Drain Source Resistance
    250 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    165 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-2
  • Applications
    DC-DC converter, Motor drives

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products