ISK036N03LM5

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ISK036N03LM5 Image

The ISK036N03LM5 from Infineon Technologies is an N-Channel Enhancement Mode Power MOSFET. It has a gate-source voltage of ± 16 V and a gate threshold voltage of 1.2-2 V. This MOSFET has a drain-source breakdown voltage of over 30 V and a drain-source resistance of 2.4-4.6 m?. It has a power dissipation of 2.1 to 11 W. This MOSFET has a continuous drain current of 16.5-44 A and a pulsed drain current of 174 A.  It offers superior thermal resistance and has the lowest drain-source on-state resistance. This RoHS compliant MOSFET is available in a surface-mount package that measures 2 x 2 x 0.65 mm and is ideal for chargers, consumer appliances, server and telecom power supplies, drones, and wireless charging applications.

Product Specifications

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Product Details

  • Part Number
    ISK036N03LM5
  • Manufacturer
    Infineon Technologies
  • Description
    30 V N-Channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    2 X 2 X 0.65 mm
  • Continous Drain Current
    16.5 to 44 A
  • Drain Source Resistance
    2.4 to 4.6 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Charge
    7.7 to 21.5 nC
  • Power Dissipation
    2.1 to 11 W
  • Temperature operating range
    -55 to 150 degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Charger, Consumer appliances, Consumer Electronics - Displays (LCD or Plasma TV)Server and Telecom Power Supplies - SMPS, Fixed Telecom, Industrial SMPS, Robots and Drones, Wireless Charging

Technical Documents

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