The ISK036N03LM5 from Infineon Technologies is an N-Channel Enhancement Mode Power MOSFET. It has a gate-source voltage of ± 16 V and a gate threshold voltage of 1.2-2 V. This MOSFET has a drain-source breakdown voltage of over 30 V and a drain-source resistance of 2.4-4.6 m?. It has a power dissipation of 2.1 to 11 W. This MOSFET has a continuous drain current of 16.5-44 A and a pulsed drain current of 174 A.  It offers superior thermal resistance and has the lowest drain-source on-state resistance. This RoHS compliant MOSFET is available in a surface-mount package that measures 2 x 2 x 0.65 mm and is ideal for chargers, consumer appliances, server and telecom power supplies, drones, and wireless charging applications.