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IQIA60N80B3

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The IQIA60N80B3 from iQXPRZ Power is a MOSFET with Continous Drain Current 38 to 60 A, Drain Source Resistance 0.063 to 0.168 ohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Surface Mount. More details for IQIA60N80B3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQIA60N80B3
  • Manufacturer
    iQXPRZ Power
  • Description
    800 V, 38 to 60 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    38 to 60 A
  • Drain Source Resistance
    0.063 to 0.168 ohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    352 nC
  • Switching Speed
    15 to 72 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT227
  • Note
    Input Capacitance :- 9200 pF

Technical Documents
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