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IQIA62N90B3

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The IQIA62N90B3 from iQXPRZ Power is a MOSFET with Continous Drain Current 40 to 62 A, Drain Source Resistance 0.05 to 0.135 ohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for IQIA62N90B3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQIA62N90B3
  • Manufacturer
    iQXPRZ Power
  • Description
    900 V, 40 to 62 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    40 to 62 A
  • Drain Source Resistance
    0.05 to 0.135 ohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    540 nC
  • Switching Speed
    20 to 400 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT227
  • Note
    Input Capacitance :- 13600 pF

Technical Documents
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