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INKE211AC1-T150

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The INKE211AC1-T150 from Isahaya Electronics is a MOSFET with Continous Drain Current 1.0 A, Drain Source Resistance 200 to 250 milli-ohm, Drain Source Breakdown Voltage 40 to 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Surface Mount. More details for INKE211AC1-T150 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INKE211AC1-T150
  • Manufacturer
    Isahaya Electronics
  • Description
    40 to 60 V, 1.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.0 A
  • Drain Source Resistance
    200 to 250 milli-ohm
  • Drain Source Breakdown Voltage
    40 to 60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Switching Speed
    85 to 170 ns
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SC-59
  • Applications
    Motor drive, High-speed switching, Analog switching
  • Note
    Input Capacitance :- 170 pF

Technical Documents
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