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IRF1010E

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The IRF1010E from JSMicro Semiconductor is a MOSFET with Continous Drain Current 65 to 85 A, Drain Source Resistance 7.5 to 8.5 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -25 to -25 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for IRF1010E can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF1010E
  • Manufacturer
    JSMicro Semiconductor
  • Description
    60 V, 65 to 85 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    65 to 85 A
  • Drain Source Resistance
    7.5 to 8.5 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -25 to -25 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    72 nC
  • Switching Speed
    13 to 75 ns
  • Power Dissipation
    200 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 3091 pF

Technical Documents
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