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IXFN200N10P

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IXFN200N10P Image

The IXFN200N10P from Littelfuse is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 7.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 5 V. Tags: Chassis Mount. More details for IXFN200N10P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXFN200N10P
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 235 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    7.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 5 V
  • Gate Charge
    235 nC
  • Power Dissipation
    680 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Chassis Mount
  • Package
    SOT-227
  • Applications
    DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, Uninterrupted power supplies, AC motor control, High speed power switching applications

Technical Documents
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