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IXTP200N055T2

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The IXTP200N055T2 from Littelfuse is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 4.2 Milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IXTP200N055T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTP200N055T2
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 109 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    4.2 Milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    109 nC
  • Power Dissipation
    360 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Automotive - Motor Drives - 42V Power Bus - ABS Systems, DC/DC Converters and Off-line UPS, Primary Switch for 24V and 48V Systems, Distributed Power Architechtures and VRMs, Electronic Valve Train Systems, High Current Switching Applications, High Voltag

Technical Documents
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