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IXTU4N60P

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IXTU4N60P Image

The IXTU4N60P from Littelfuse is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5.5 V. Tags: Through Hole. More details for IXTU4N60P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTU4N60P
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 13 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2000 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5.5 V
  • Gate Charge
    13 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    DC-DC Coverters, Battery Chargers, Switch-Mode and Resonant-Mode Power Supplies, DC Choppers, AC and DC Motor Drives, Uninterrupted Power Supplies, High Speed Power Switching Applications

Technical Documents
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