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APT1001RSVFR

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APT1001RSVFR Image

The APT1001RSVFR from Microchip Technology is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 1000 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for APT1001RSVFR can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT1001RSVFR
  • Manufacturer
    Microchip Technology
  • Description
    1000 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    1000 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    150 nC
  • Power Dissipation
    278 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D3PAK

Technical Documents
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