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APT5010B2LL(G)

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APT5010B2LL(G) Image

The APT5010B2LL(G) from Microchip Technology is a MOSFET with Continous Drain Current 46 A, Drain Source Resistance 100 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for APT5010B2LL(G) can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT5010B2LL(G)
  • Manufacturer
    Microchip Technology
  • Description
    500 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    46 A
  • Drain Source Resistance
    100 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    95 nC
  • Power Dissipation
    520 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    T-MAX
  • Applications
    ZVS phase shifted and other full bridge, Half bridge, PFC and other boost converter, Buck converter, Single and two switch forward, Flyback

Technical Documents
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