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APT6010B2LLG

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APT6010B2LLG Image

The APT6010B2LLG from Microchip Technology is a MOSFET with Continous Drain Current 54 A, Drain Source Resistance 100 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for APT6010B2LLG can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT6010B2LLG
  • Manufacturer
    Microchip Technology
  • Description
    600 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    54 A
  • Drain Source Resistance
    100 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    150 nC
  • Power Dissipation
    690 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-264

Technical Documents
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