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DN2535N3-G P013

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DN2535N3-G P013 Image

The DN2535N3-G P013 from Microchip Technology is a MOSFET with Continous Drain Current 0.12 A, Drain Source Resistance 17000 to 25000 milliohm, Drain Source Breakdown Voltage 350 V, Gate Source Voltage -20 to 20 V, Power Dissipation 1 W. Tags: Through Hole. More details for DN2535N3-G P013 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DN2535N3-G P013
  • Manufacturer
    Microchip Technology
  • Description
    350 V, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.12 A
  • Drain Source Resistance
    17000 to 25000 milliohm
  • Drain Source Breakdown Voltage
    350 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Applications
    Normally-on switches, Solid state relays, Converters, Linear amplifiers, Constant current sources, Power supply circuits, Telecom

Technical Documents
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