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PMN100EPA

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PMN100EPA Image

The PMN100EPA from Nexperia is a MOSFET with Continous Drain Current -2.5 to -1.6 A, Drain Source Resistance 100 to 276 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3.2 to -1.9 V. Tags: Surface Mount. More details for PMN100EPA can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMN100EPA
  • Manufacturer
    Nexperia
  • Description
    60 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 to -1.6 A
  • Drain Source Resistance
    100 to 276 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3.2 to -1.9 V
  • Gate Charge
    11 to 17 nC
  • Power Dissipation
    0.66 to 7.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT457
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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