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PSMN047-100NSE

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PSMN047-100NSE Image

The PSMN047-100NSE from Nexperia is a MOSFET with Continous Drain Current 10 to 17 A, Drain Source Resistance 36 to 113 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3.6 V. Tags: Surface Mount. More details for PSMN047-100NSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN047-100NSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 3.8 to 7.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 17 A
  • Drain Source Resistance
    36 to 113 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3.6 V
  • Gate Charge
    3.8 to 7.2 nC
  • Power Dissipation
    33 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial, Aerospace
  • Package Type
    Surface Mount
  • Package
    DFN2020M-6
  • Applications
    High power PoE applications, EEE802.3at and proprietary solutions

Technical Documents
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