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PSMN1R8-30PL

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PSMN1R8-30PL Image

The PSMN1R8-30PL from Nexperia is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 1.6 to 4.73 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 2.45 V. Tags: Through Hole. More details for PSMN1R8-30PL can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN1R8-30PL
  • Manufacturer
    Nexperia
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    1.6 to 4.73 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 2.45 V
  • Gate Charge
    83 to 170 nC
  • Power Dissipation
    270 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents
View details on the manufacturer's website
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