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PSMN4R2-80YSE

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PSMN4R2-80YSE Image

The PSMN4R2-80YSE from Nexperia is a MOSFET with Continous Drain Current 170 A, Drain Source Resistance 3.2 to 6.4 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.6 to 3.6 V. Tags: Surface Mount. More details for PSMN4R2-80YSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R2-80YSE
  • Manufacturer
    Nexperia
  • Description
    80 V, 4.2 mOhm N-channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    4.7 x 5.3 x 1.1 mm
  • Continous Drain Current
    170 A
  • Drain Source Resistance
    3.2 to 6.4 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.6 to 3.6 V
  • Gate Charge
    37 to 110 nC
  • Power Dissipation
    294 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK56E
  • Applications
    Load switch, hot swap, soft start, e-fuse, telecommunication systems based on a 48 V backplane/supply rail

Technical Documents
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