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PSMN4R8-100YSE

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PSMN4R8-100YSE Image

The PSMN4R8-100YSE from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 3.6 to 7.7 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.6 to 3.6 V. Tags: Surface Mount. More details for PSMN4R8-100YSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R8-100YSE
  • Manufacturer
    Nexperia
  • Description
    100 V, 4.8 mOhm N-channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Dimensions
    4.7 x 5.3 x 1.1 mm
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    3.6 to 7.7 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.6 to 3.6 V
  • Gate Charge
    40 to 120 nC
  • Power Dissipation
    294 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK56E
  • Applications
    e-fuse, hot swap, Load switch, soft start, telecommunication systems based on a 48 V backplane/supply rail

Technical Documents
View details on the manufacturer's website
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