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PXN4R7-30QL

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PXN4R7-30QL Image

The PXN4R7-30QL from Nexperia is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 3.9 to 7.7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PXN4R7-30QL can be seen below.

Product Specifications

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Product Details

  • Part Number
    PXN4R7-30QL
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 14.7 to 46.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    3.9 to 7.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    14.7 to 46.2 nC
  • Power Dissipation
    1.8 to 42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MLPAK33
  • Applications
    DC-to-DC converters, Battery management, Low-side load-switch, Switching circuits

Technical Documents
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