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FDB2532-F085

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The FDB2532-F085 from onsemi is a MOSFET with Continous Drain Current 79 A, Drain Source Resistance 14 to 48 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FDB2532-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB2532-F085
  • Manufacturer
    onsemi
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    79 A
  • Drain Source Resistance
    14 to 48 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    107 nC
  • Power Dissipation
    310 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3
  • Applications
    DC/DC converters and Off-Line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24 V and 48 V Systems, High Voltage Synchronous Rectifier, Direct Injection / Diesel Injection Systems, 42 V Automotive Load Control, Electronic Valve Train Sy

Technical Documents
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