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FDB9503L-F085

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The FDB9503L-F085 from onsemi is a MOSFET with Continous Drain Current -110 A, Drain Source Resistance 2 to 3.7 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for FDB9503L-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB9503L-F085
  • Manufacturer
    onsemi
  • Description
    -40 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -110 A
  • Drain Source Resistance
    2 to 3.7 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    196 to 255 nC
  • Power Dissipation
    333 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Electronic Steering, Integrated Starter/Alternator, Distributed Power Architectures and VRM, Primary Switch for 12V Systems

Technical Documents
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