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FDH50N50-F133

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The FDH50N50-F133 from onsemi is a MOSFET with Continous Drain Current 48 A, Drain Source Resistance 89 to 105 milli-ohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FDH50N50-F133 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDH50N50-F133
  • Manufacturer
    onsemi
  • Description
    500 V, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    48 A
  • Drain Source Resistance
    89 to 105 milli-ohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    105 to 137 nC
  • Power Dissipation
    625 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Lighting, Uninterruptible Power Supply, AC-DC Power Supply

Technical Documents
View details on the manufacturer's website
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