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STP190N55LF3

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STP190N55LF3 Image

The STP190N55LF3 from STMicroelectronics is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 2.9 to 4.5 Milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -18 to 18 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for STP190N55LF3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STP190N55LF3
  • Manufacturer
    STMicroelectronics
  • Description
    -18 to 18 V, 60 to 80 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    2.9 to 4.5 Milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -18 to 18 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    60 to 80 nC
  • Power Dissipation
    312 W
  • Temperature operating range
    175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications – Automotive

Technical Documents
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