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FDS89161LZ

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FDS89161LZ Image

The FDS89161LZ from onsemi is a MOSFET with Continous Drain Current 2.7 A, Drain Source Resistance 105 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 V. Tags: Surface Mount. More details for FDS89161LZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS89161LZ
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 2 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.7 A
  • Drain Source Resistance
    105 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 V
  • Gate Charge
    2.1 to 5.3 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    DC/DC conversion

Technical Documents
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