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FDT1600N10ALZ

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The FDT1600N10ALZ from onsemi is a MOSFET with Continous Drain Current 5.6 A, Drain Source Resistance 160 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.8 V. Tags: Surface Mount. More details for FDT1600N10ALZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDT1600N10ALZ
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 10.42 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.6 A
  • Drain Source Resistance
    160 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.8 V
  • Gate Charge
    1.6 to 3.77 nC
  • Power Dissipation
    10.42 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223-4 / TO-261-4
  • Applications
    Consumer appliances, LEC/LED/PDP TV, Synchronous rectification, Battery protection circuit, Moter drive, UPS

Technical Documents
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