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FDV303N

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FDV303N Image

The FDV303N from onsemi is a MOSFET with Continous Drain Current 0.68 A, Drain Source Resistance 330 to 800 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.65 to 1 V. Tags: Surface Mount. More details for FDV303N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDV303N
  • Manufacturer
    onsemi
  • Description
    25 V, 1.64 to 2.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.68 A
  • Drain Source Resistance
    330 to 800 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.65 to 1 V
  • Gate Charge
    1.64 to 2.3 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3

Technical Documents
View details on the manufacturer's website
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