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FQA10N80C-F109

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FQA10N80C-F109 Image

The FQA10N80C-F109 from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 930 to 1100 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQA10N80C-F109 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQA10N80C-F109
  • Manufacturer
    onsemi
  • Description
    900 V, 45 to 58 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    930 to 1100 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    45 to 58 nC
  • Power Dissipation
    240 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P-3L

Technical Documents
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