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FQA170N06

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FQA170N06 Image

The FQA170N06 from onsemi is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 4.5 to 5.6 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQA170N06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQA170N06
  • Manufacturer
    onsemi
  • Description
    60 V, 220 to 290 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    4.5 to 5.6 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    220 to 290 nC
  • Power Dissipation
    240 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-3P-3L

Technical Documents
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