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FQA160N08

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FQA160N08 Image

The FQA160N08 from onsemi is a MOSFET with Continous Drain Current 160 A, Drain Source Resistance 5.6 to 7 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQA160N08 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQA160N08
  • Manufacturer
    onsemi
  • Description
    150 V, 225 to 290 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    160 A
  • Drain Source Resistance
    5.6 to 7 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    225 to 290 nC
  • Power Dissipation
    375 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-3P-3L

Technical Documents
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