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FQP11N40C

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FQP11N40C Image

The FQP11N40C from onsemi is a MOSFET with Continous Drain Current 10.5 A, Drain Source Resistance 430 to 430 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQP11N40C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP11N40C
  • Manufacturer
    onsemi
  • Description
    400 V, 28 to 35 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.5 A
  • Drain Source Resistance
    430 to 430 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    28 to 35 nC
  • Power Dissipation
    135 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220-3

Technical Documents
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