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FQPF70N10

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The FQPF70N10 from onsemi is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 19 to 23 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQPF70N10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQPF70N10
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    19 to 23 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    85 to 110 nC
  • Power Dissipation
    62 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F

Technical Documents
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