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NTBGS004N10G

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NTBGS004N10G Image

The NTBGS004N10G from onsemi is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 3 to 4.1 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for NTBGS004N10G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTBGS004N10G
  • Manufacturer
    onsemi
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    3 to 4.1 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    178 nC
  • Power Dissipation
    3.7 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    D2PAK-7L
  • Applications
    Hot Swap in 48 V Systems

Technical Documents
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