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NTMFS002P03P8ZT1G

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The NTMFS002P03P8ZT1G from onsemi is a MOSFET with Continous Drain Current -263 A, Drain Source Resistance 0.9 to 2.3 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NTMFS002P03P8ZT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS002P03P8ZT1G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -263 A
  • Drain Source Resistance
    0.9 to 2.3 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    217 nC
  • Power Dissipation
    138.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8 FLAT LEAD
  • Applications
    Power Load Switch, Protection: Reverse Current, Over Voltage, and Reverse Negative Voltage, Battery Management

Technical Documents
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