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NTMFWS1D5N08XT1G

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The NTMFWS1D5N08XT1G from onsemi is a MOSFET with Continous Drain Current 179 to 253 A, Drain Source Resistance 1.24 to 2.5 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Surface Mount. More details for NTMFWS1D5N08XT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFWS1D5N08XT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 83 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    179 to 253 A
  • Drain Source Resistance
    1.24 to 2.5 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    83 nC
  • Switching Speed
    9 to 43 ns
  • Power Dissipation
    194 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW5
  • Applications
    Synchronous Rectification (SR) in DC-DC and AC-DC, Primary Switch in Isolated DC-DC Converter, Motor Drives

Technical Documents
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