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NTMJS0D7N03CGTWG

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NTMJS0D7N03CGTWG Image

The NTMJS0D7N03CGTWG from onsemi is a MOSFET with Continous Drain Current 410 A, Drain Source Resistance 0.55 to 0.65 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Surface Mount. More details for NTMJS0D7N03CGTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMJS0D7N03CGTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 147 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    410 A
  • Drain Source Resistance
    0.55 to 0.65 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    147 nC
  • Power Dissipation
    188 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8
  • Applications
    Hot Swap Application, Motor Drive, Power Load Switch, Battery Management

Technical Documents
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