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NVMFWS0D4N04XMT1G

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The NVMFWS0D4N04XMT1G from onsemi is a MOSFET with Continous Drain Current 509 A, Drain Source Resistance 0.33 to 0.42 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for NVMFWS0D4N04XMT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFWS0D4N04XMT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 138 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    509 A
  • Drain Source Resistance
    0.33 to 0.42 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    138 nC
  • Power Dissipation
    197 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW5 (SO-8FL WF)
  • Applications
    Motor Drive, Battery Protection, Synchronous Rectification

Technical Documents
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