NVMJS0D8N04CLTWG

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The NVMJS0D8N04CLTWG from onsemi is a MOSFET with Continous Drain Current 368 A, Drain Source Resistance 0.6 to 1.15 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVMJS0D8N04CLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMJS0D8N04CLTWG
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    368 A
  • Drain Source Resistance
    0.6 to 1.15 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    78 to 162 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Technical Documents

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