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NVTYS029N08HTWG

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The NVTYS029N08HTWG from onsemi is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 26.8 to 32.4 mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVTYS029N08HTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVTYS029N08HTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 6.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.3 x 3.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    26.8 to 32.4 mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    6.3 nC
  • Power Dissipation
    33 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
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