1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Panasonic Corporation
  6. FC4B22670L

FC4B22670L

Download Datasheet Request Quote

Note : Your request will be directed to Panasonic Corporation.

The FC4B22670L from Panasonic Corporation is a MOSFET with Continous Drain Current 6.1 A, Drain Source Resistance 29 to 100 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.4 V. Tags: Chip. More details for FC4B22670L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FC4B22670L
  • Manufacturer
    Panasonic Corporation
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.1 A
  • Drain Source Resistance
    29 to 100 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    4.5 nC
  • Power Dissipation
    1.9 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Lithium-ion Battery Protection

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products