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FCAB22510L

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The FCAB22510L from Panasonic Corporation is a MOSFET with Drain Source Resistance 3.3 to 14 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.35 to 1.4 V, Gate Charge 19 nC. Tags: Chip. More details for FCAB22510L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB22510L
  • Manufacturer
    Panasonic Corporation
  • Description
    12 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Drain Source Resistance
    3.3 to 14 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    19 nC
  • Power Dissipation
    0.51 to 3.1 W
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP

Technical Documents
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