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PJD12P06-AU

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The PJD12P06-AU from PANJIT Semiconductor is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 132 to 155 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for PJD12P06-AU can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJD12P06-AU
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    132 to 155 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    10.9 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA

Technical Documents
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