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PJMD600N65E1

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The PJMD600N65E1 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 7.3 A, Drain Source Resistance 502 to 600 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PJMD600N65E1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJMD600N65E1
  • Manufacturer
    PANJIT Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.3 A
  • Drain Source Resistance
    502 to 600 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    17 nC
  • Power Dissipation
    22 to 54 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA
  • Applications
    PD Charger, Adapter, Monitor PSU

Technical Documents
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