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PSMQC033N06NS1

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PSMQC033N06NS1 Image

The PSMQC033N06NS1 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 131 A, Drain Source Resistance 2.5 to 5.4 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMQC033N06NS1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMQC033N06NS1
  • Manufacturer
    PANJIT Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    131 A
  • Drain Source Resistance
    2.5 to 5.4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    99 nC
  • Power Dissipation
    38 to 96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-8L
  • Applications
    BMS, BLDC motor driver switch, Load Switch

Technical Documents
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