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RM180N100AT2

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The RM180N100AT2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 2.5 to 3 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM180N100AT2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM180N100AT2
  • Manufacturer
    Rectron Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    2.5 to 3 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    106 nC
  • Power Dissipation
    341 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification in SMPS, Hard Switching and High Speed Circuit, Power Tools, UPS, Motor Control, Halogen-free

Technical Documents
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