UPA1917TE

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The UPA1917TE from Renesas is a MOSFET with Continous Drain Current -6 to 6 A, Drain Source Resistance 42 to 107 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Charge 8.1 nC. Tags: Surface Mount. More details for UPA1917TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UPA1917TE
  • Manufacturer
    Renesas
  • Description
    -20 V, 8.1 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 to 6 A
  • Drain Source Resistance
    42 to 107 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Charge
    8.1 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TMM

Technical Documents

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