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BSS84XHZG

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The BSS84XHZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.23 to 0.23 A, Drain Source Resistance 2800 to 6400 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for BSS84XHZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSS84XHZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.23 to 0.23 A
  • Drain Source Resistance
    2800 to 6400 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Power Dissipation
    1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN1010-3W
  • Applications
    Switching circuits, Low-side loadswitch, Relay driver

Technical Documents
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