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QH8KB6

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QH8KB6 Image

The QH8KB6 from ROHM Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 13.7 to 27 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for QH8KB6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QH8KB6
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    13.7 to 27 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    5 to 10.6 nC
  • Power Dissipation
    1.1 to 1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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